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Visible-light-emitting lasers were fabricated, using a new stripe-geometry double heterostructure. The distinct feature of the geometry is the isolation of the contact stripe electrode to p-GaAs by the use of a layer of n-Ga 1-z Al z As epitaxially grown on top of p-GaAs. This geometry results in small internal strain, few crystal imperfections, and low thermal resistance in diodes so that high laser performance can be obtained. Lasing wavelengths as short as 7610 Å and 6680 Å have been attained in CW and pulsed operation, respectively, at room temperature. Various characteristic features of the lasers are described with regard to optical spectra, lasing thresholds, and external quantum efficiencies.
Itoh et al. (1975) studied this question.