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December 1, 2011135 citations

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

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IBIn-Hwan BaekInha UniversityCPChanyeol ParkHJHyunsu JuGwangju Institute of Science and Technology

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Abstract

Vertical ReRAM (VRRAM) has been realized with modification of Vertical NAND (VNAND) process and architecture as a cost-effective and extensible technology for future mass data storage. Dedicated ALD/CVD deposition and wet etching processes were developed to reproduce planar ReRAM properties in VRRAM structure. Multi-stack of VRRAM cell layers were fabricated at the same time using ALD TaOx/barrier layer/CVD TiN cell stacks. Oxidation control without intermixing has been found very critical in the vertical ReRAM cell process.

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Cite This Study

Baek et al. (2011) studied this question.

synapsesocial.com/papers/6a20e652920f77b2c049de3dhttps://doi.org/10.1109/iedm.2011.6131654
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