To address the critical challenges of edge chipping and poor processing quality in sapphire precision dicing, this paper proposes a femtosecond laser filamentation-guided dicing technology. By systematically investigating the influence of pulse overlap rate, energy, and scan counts on damage evolution, the physical differences between 343 nm UV and 515 nm visible lasers in suppressing plasma shielding and breaking through processing saturation limits are revealed. The results indicate that an extremely high pulse overlap rate (>98%) significantly inhibits lateral energy dissipation and drives the efficient propagation of the filament deep along the optical axis; furthermore, the 343 nm laser demonstrates superior removal rates and localisation compared to the 515 nm laser. Using super-resolution imaging, the precision cleavage cross-section is clearly categorised into four evolutionary stages: general ablation, filament ablation, transition, and mechanical cleavage. To mitigate morphological degradation induced by multiple scans, a sacrificial-layer-assisted strategy is innovatively proposed to achieve spatial damage transfer and in situ self-polishing, effectively eliminating longitudinal damage striations and residual stress-induced hackles. Finally, taper-free, high-precision separation of 1 mm × 450 μm micro-units is successfully achieved on a 220-μm-thick sapphire wafer. This technology not only achieves ultra-low-loss dicing but also establishes a highly efficient, contamination-free in situ characterisation paradigm for buried structures in hard and brittle materials.
Zhao et al. (2026) studied this question.