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A consistent model for the intrinsic time dependent dielectric breakdown (TDDB) of thin oxides is introduced. This model links the existing anode hole injection and the electron trap generation models together and describes wearout as a hole induced generation of electron traps. Breakdown is defined as conduction via these traps from one interface to the other. Implementing the model in a simulator, the oxide thickness dependence of the Weibull slope of the Q/sub BD/-distribution is predicted, and, using the unique relationship between hole fluence and generated electron trap density, the decrease of the critical hole fluence with oxide thickness is explained.
Degraeve et al. (2002) studied this question.