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We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the 001 axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
Wu et al. (2012) studied this question.
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