Cross-correlated charge noise in silicon quantum dots has emerged as an important issue for fault-tolerant quantum computation, as it has been suggested to both limit quantum error correction performance and reveal unique information about noise sources. We develop a method to characterize charge noise cross-correlations in a semiconductor qubit device based solely on quantum-dot transport current. By dynamically switching the site-selective sensitivity of transport current through a double quantum dot to charge noise, we extract potential fluctuations at individual dots without requiring additional sensing devices or spin operations. Based on the obtained power spectral densities, we discuss the coupling of a dominant two-level fluctuator to individual dots. We furthermore verify the consistency of the measurement protocol by applying artificial noise via gate electrodes and investigate the temperature dependence of charge noise correlations. The method offers a convenient and versatile alternative approach that substantially facilitates the assessment of charge noise correlations in diverse semiconductor qubit devices.
Matsuoka et al. (2026) studied this question.