Key points are not available for this paper at this time.
A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.
Banerjee et al. (1987) studied this question.