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July 8, 2026Applied Physics Letters0 citations

Reflective lensless through-silicon phase imaging for advanced semiconductor packaging metrology

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АВА. А. ВласовISIgor ShevkunovKEKaren Egiazarian

Key Points

  • The aim is to improve metrology for semiconductor packaging by introducing a lensless imaging system that inspects buried interfaces during assembly.
  • Introduced reflective-mode lensless through-silicon microscopy using coherent 1064 nm illumination and a CMOS sensor.
  • Utilized iterative phase retrieval with denoising regularization to recover amplitude and phase from single diffraction patterns.
  • Validated imaging of silicone-photonic PICs and III-V/Si assemblies through silicon substrate.
  • Resolved features down to 2.19 μm under a conservative contrast criterion.
  • Phase channel achieved higher contrast and improved feature fidelity across the field, while amplitude performance remained consistent with previous methods.
  • Enabled digital refocusing for depth-selective reconstruction of stacked-chip configurations.

Abstract

Achieving high-yield heterogeneous integration in silicon photonics and advanced microelectronics requires compact, high-contrast metrology to inspect buried interfaces during die-to-wafer and stacked-chip assembly. This inspection underpins pre-bond alignment, post-bond offset verification, and defect screening, yet conventional through-silicon microscopy depends on objective optics and mechanical focusing that are difficult to integrate into high-throughput packaging tools. Building on progress in lensless computational imaging, we expand its role in the semiconductor value chain by introducing reflective-mode lensless through-silicon microscopy for packaged systems. Our module combines coherent 1064 nm illumination, a non-polarizing beam splitter reflective geometry, and a CMOS sensor; amplitude and phase are recovered from a single recorded diffraction pattern using iterative phase retrieval with denoising regularization. By eliminating objectives and moving parts, the architecture reduces footprint while preserving micrometer-scale spatial resolution. Using a USAF-1951 target, the system resolves features down to 2.19 μm under a conservative contrast criterion. Contrast-transfer analysis shows that the phase channel delivers markedly higher contrast and improved feature fidelity across the field of view, while the amplitude channel remains consistent with previously reported through-silicon near-infrared (NIR) microscopy performance. We validate application relevance by imaging silicon-photonic PICs and heterogeneous III–V/Si assemblies through the silicon substrate, resolving waveguides, metallization, chip edges, alignment markers, and bonding-related defects. In stacked-chip configurations, digital refocusing enables depth-selective reconstruction of multiple layers. These results position reflective lensless through-silicon phase imaging as a scalable, compact alternative to conventional NIR/short-wave infrared microscopy for semiconductor assembly metrology, enabling in-tool inspection and alignment verification for emerging co-packaged optics and 3D chiplet architectures.

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Cite This Study

Власов et al. (2026) studied this question.

synapsesocial.com/papers/6a4de8a7d2ea289ef6283491https://doi.org/10.1063/5.0333722
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