Realization of 1.54‐µm Light‐Emitting Diodes Based on Er3+/Yb3+Co‐Doped CsPbCl3 Films

Abstract Erbium ions (Er 3+ , 1.54 µm) electric pumped light sources with excellent optical properties and a simple fabrication process are urgently desired to satisfy the development of silicon‐based integration photonics. The previous Er‐based electroluminescence devices are mainly based on Er‐complexes or Er‐doped oxide compounds, which usually suffer from low external quantum efficiency(EQE)or high applied voltage etc. In this work, a novel type of Er 3+ /Yb 3+ co‐doped lead‐halide perovskite films (Er 3+ /Yb 3+ :CsPbCl 3 ) with the maximum photoluminescence quantum yield of 30.12% are prepared by a simple two‐step solution‐coating method and the corresponding light emitting diodes (Er‐PeLEDs) are fabricated, which demonstrate an almost pure 1.54‐µm emission and a peak EQE up to 0.366% at a low applied voltage of 1.4 V. Strong negative thermal quenching effect may help Er‐PeLEDs suppress Joule heating quenching. These excellent LED properties benefit mainly from the outstanding regulatory performance of acetate to perovskite films, the excellent semiconductor behavior and strong ionic property of the perovskite, and the involvement of Yb 3+ ions, which can directly and efficiently transfer the exciton energy to Er 3+ through a quantum cutting process. Overall, the realization of 1.54‐µm Er‐PeLEDs offers new opportunities for silicon‐based integrated light sources.