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The design of a new kind of photodetector, the dual-depletion region p-i-n photodetector, is presented. This vertical detector has a parasitic capacitance and transit time that can be controlled semi-independently. This eases the classical tradeoff between these two speed limiting factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is made. This analysis is then used to compute optimum design parameters.
Effenberger et al. (1996) studied this question.