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The intrinsic instability of CsPbI 3 quantum dots (QDs) presents a major challenge for their practical deployment in optoelectronic devices. Here, we demonstrate the combined effects of Ag + doping and halide (Cl – /I – ) passivation to enhance the structural and optical stability of CsPbI 3 QDs. Partial substitution of Pb 2+ by Ag + leads to lattice contraction and defect suppression, while Cl – acts as a surface-localized passivating agent. Structural analyses (X-ray diffraction, high-resolution transmission electron microscopy, and high-resolution scanning transmission electron microscopy) confirm successful Ag + incorporation without secondary phase formation, and X-ray photoelectron spectroscopy depth profiling reveals surface enrichment of Cl – . Mixed doping with AgCl and AgI precursors effectively stabilizes the cubic perovskite phase, increasing the photoluminescence quantum yield (PLQY) from ∼85 to 96.6% and reducing nonradiative recombination, as supported by time-resolved photoluminescence measurements. The optimized CsPb 1– x Ag x I 3 ( x = 0.025 AgCl + 0.025 AgI) exhibits outstanding photostability, retaining ∼41% of its initial PLQY after 70 days of continuous ultraviolet exposure. When integrated into red-emitting light-emitting diode devices, these QDs deliver external quantum efficiencies up to 36.8%, with stable and saturated emission. These results establish Ag + /halide codoping as a powerful strategy to advance CsPbI 3 QDs toward robust and high-performance optoelectronic applications.
Naziri et al. (2025) studied this question.