Key points are not available for this paper at this time.
The first measurement of the hole mobility and its temperature dependence in thermally grown SiO2 on Si is reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec. In agreement with previous studies, the energy required to form an electron−hole pair with ionizing radiation is found to be field dependent and at very high fields is in the range of 18 eV/electron−hole pair, and is nearly temperature independent from 77 to 370 °K.
R. C. Hughes (1975) studied this question.