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Maintenance of higher doping levels in the AlxGa1−xAs barrier layers of double-heterostructure lasers permits one to use smaller molar fractions x, thereby minimizing the lattice mismatch between AlxGa1−xAs and GaAs. We estimate conduction-band and valence-band parameters of AlxGa1−xAs and show the relationship between laser threshold current and doping level.
D. L. Rode (1974) studied this question.