PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
November 10, 1986Applied Physics Letters479 citations

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

View Full Paper
JCJ. CibértPPP. M. PetroffGDG. J. Dolan

Key Points

Key points are not available for this paper at this time.

Abstract

Carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs-GaAlAs system. Low-temperature cathodoluminescence measurements show new luminescence lines attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Cibért et al. (1986) studied this question.

synapsesocial.com/papers/6a6f6a22e5469ee92be05e84https://doi.org/10.1063/1.97384
Ask AI
Helpful
Bookmark
Share
View Full Paper

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion1983 · 92 citations
  2. 2Superlattice and Negative Differential Conductivity in Semiconductors1970 · 3,316 citations
  3. 3Enhanced modulation bandwidth of GaAlAs double heterostructure lasers in high magnetic fields: Dynamic response with quantum wire effects1985 · 38 citations
  4. 4Investigation of electron emission from discontinuous metal films1976 · 14 citations
  5. 5Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures1980 · 921 citations