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The conditions of growth of In1−xGaxAsyP1−y lattice-matched to InP by the liquid-phase epitaxy technique on (111) B-oriented substrates have been analyzed in this paper. The epilayer composition has been varied from InP to In0.53Ga0.47As. The layer quality is more sensitive to experimental variables as the composition approaches the In0.53Ga0.47As side than when growing InP-rich quaternaries. Hall measurements indicate the background doping to be in the low 1015/cm3 range if pure As and PH3 are used as the sources of the column-V elements and the melt is baked at high temperature prior to growth.
Sankaran et al. (1976) studied this question.