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The barrier heights φB of Au/n-InxGa1−xAs diodes are measured by the capacitance-voltage and saturation current methods. The composition dependence of the barrier height is φB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.
Kajiyama et al. (1973) studied this question.