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June 1, 1979Journal of Applied Physics10 citations

Be doping of liquid-phase-epitaxial InP

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EAE. B. AbramsAlcatel Lucent (Germany)SSS. SumskiAT&T (United States)WBW. A. BonnerAT&T (United States)

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Abstract

The distribution coefficient for Be-doped liquid-phase-epitaxial InP is determined to be kBe?0.1. Comparison is made with other p-type and n-type impurities with regard to suitability for use in GaInPAs-InP double heterostructures.

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Cite This Study

Abrams et al. (1979) studied this question.

synapsesocial.com/papers/6a6fbd832163a0a01bc40274https://doi.org/10.1063/1.326408
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