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July 1, 1976Applied Physics Letters44 citations

Leaky wave room-temperature double heterostructure GaAs:GaAlAs diode laser

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DSD. R. ScifresWSW. StreiferRBR. D. Burnham

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Abstract

Operation of a new cleaved facet room-temperature double heterostructure GaAs:GaAlAs laser utilizing leaky wave coupling through the substrate is reported. The coupling mechanism is analogous to that of prism coupling from a waveguide, but no external components are used. The laser produces a highly collimated output beam with approximately 2°×8° divergence. The peak pulsed beam power at 2 times threshold is 1.5 W from one end with approximately one-third of this power in the collimated beam. The total external differential quantum efficiency is on the order of 35%. These desirable characteristics are obtained at the expense of threshold current increases of approximately 30%.

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Cite This Study

Scifres et al. (1976) studied this question.

synapsesocial.com/papers/6a6fbd966ceb2bbd16dfb97ahttps://doi.org/10.1063/1.88881
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