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June 1, 1978Applied Physics Letters42 citations

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

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MFM. FengTWT. H. WindhornMTM. M. Tashima

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Abstract

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.

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Feng et al. (1978) studied this question.

synapsesocial.com/papers/6a6fbd97660549caf2c4496dhttps://doi.org/10.1063/1.89920
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