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The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelength (λ950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.
Bour et al. (1989) studied this question.