Key points are not available for this paper at this time.
Zinc impurity in high-resistivity n-type-silicon single crystals exhibits the properties of a sensitizing center for photoconductivity; the electron lifetime is increased by a factor of 10^4 to a value of 100 msec at 80 ^. A variety of photoelectronic measurements are used to determine the location of the Zn^-2 energy level with respect to the conduction- and valence-band edges, the density of zinc centers, the change in scattering cross section upon photoexcitation, the electron-capture cross section of the Zn^-1 center as a function of temperature, and the existence and properties of other imperfection states. Optical quenching of photoconductivity indicates an electron-capture cross section of the Zn^-1 center which is about 10^-20 cm^2 and independent of temperature below 50 ^, and which decreases exponentially with 1T at higher temperatures with an activation energy of 40 meV. Measurements of temperature dependence of steady-state lifetime and of photoconductivity decay time are consistent.
Sklensky et al. (1972) studied this question.