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March 4, 2003Advanced Functional Materials109 citations

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

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TKTae‐Sik KangBHBenjamin S. HarrisonMBMohamed Bouguettaya

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Abstract

Abstract Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb (DBM) 3 phen (DBM = dibenzoylmethane), Yb (DNM) 3 phen (DNM = dinaphthoylmethane), and Yb (TPP) L (OEt) (L (OEt) = (C 5 H 5) CoP (O) Et 2 3 –) have been studied. EL devices composed of Yb (DNM) 3 phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb (DBM) 3 phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb (DBM) 3 phen and Yb (DNM) 3 phen are, respectively, 7 × 10 –5 (at 6 V and at 0. 81 mA mm –2) and 4 × 10 –4 (at 7 V, and 0. 74 mA mm –2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb (DNM) 3 phen. A device fabricated using Yb‐ (TPP) L (OEt) /PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.

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Cite This Study

Kang et al. (2003) studied this question.

synapsesocial.com/papers/6a716730f44fa9f079df3375https://doi.org/10.1002/adfm.200390031
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