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Studies of transient photoconductivity show that the primary effect of light soaking in hydrogenated amorphous silicon is to introduce dangling bonds of bulk density 1016–1017 cm−3. Light soaking reduces the μτ product of both electrons and holes to values which are quantitatively related to the observed increase in the dangling bond electron spin resonance (ESR) spin density. In addition, no change in the carrier drift mobilities is detected after light soaking.
R. A. Street (1983) studied this question.