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This paper reports the measured results of a thin-film transistor (TFT) for the flat panel display application. The TFT has a double-gate structure and uses a very thin (80-100 Å) CdSe film as the semiconductor. The device has less than 10-10-A zero-gate-bias leakage current and greater than 106ON/OFF current ratio. It has been found that the only severe stability requirement on the device is in the OFF condition, Both dc and dynamic life tests have been made. The device performs better in the multiplexed condition than in the dc condition. Excellent maintenance of device parameters has been observed.
Luo et al. (1981) studied this question.
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