Key points are not available for this paper at this time.
Using low defect density n + -Al 0.4 Ga 0.6 N buffer layers we fabricated AlGaN p - n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping.
Adivarahan et al. (2002) studied this question.