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The photoluminescent and electroluminescent properties of GaN–GaN:Mg diodes are described. Visible violet electroluminescence was observed with excitation voltages of 10–20 V with the emission peak in the region of 2.9 eV. The I-V characteristics showed I ∞ V3 in the region where light was emitted, and the observed power efficiency was approximately 10−5. A photoluminescence peak at 2.9 eV provided additional evidence for an acceptor level, associated with the Mg impurity, about 0.5 eV above the valence band.
Maruska et al. (1973) studied this question.