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January 1, 1988Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena32 citations

Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x-ray diffraction

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JMJ. MizukiKAK. AkimotoIHIchiro Hirosawa

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Abstract

The superstructure at the Al–GaAs(001) interface has been observed for the first time by grazing incidence x-ray diffraction with the use of a synchrotron source. The Al overlayer of 150 Å in thickness was deposited on the (4×6)-reconstructed (001) GaAs surface. The Bragg peaks were observed at the fractional-order reciprocal lattice points of (n/4 l) in the 11̄0 direction and (0 m/6) in the 1̄1̄0 direction. The discussion is addressed to the correlation between interface reactions and the stability of the superstructure at the interface.

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Cite This Study

Mizuki et al. (1988) studied this question.

synapsesocial.com/papers/6a8950d69be9d02581bd5685https://doi.org/10.1116/1.583988
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