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We report the operation of strained-layer InxGa1−x As/GaAs 50- and 100-period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self-electro-optic effect devices at 1.064 μm.
Woodward et al. (1990) studied this question.