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A 5-V-only 16-Mb CMOS flash memory with sector erase mode is described. An optimized memory cell with diffusion self-aligned drain structure and channel erase are keys to achieving 5-V-only operation. By adopting this erase method and row decoders to apply negative bias, 512-word sector erase can be realized. The auto chip erase time of 4 s has been achieved by adopting 64-b simultaneous operation and improved erase sequence. The cell size is 1.7 mu m*2.0 mu m and the chip size is 6.3 mm*18.5 mm using 0.6- mu m double-layer metal triple-well CMOS technology.>
Jinbo et al. (1992) studied this question.