Ultra-High Brightness Near-Infrared Perovskite Light-Emitting Diodes Enabled by Aluminum-Doped Zinc Oxide Electron Transport Layers

Key Points

• Substantial gains in brightness were achieved, enhancing the potential applications of near-infrared PeLEDs.
• Quantum efficiency improvements demonstrate the effectiveness of aluminum-doped zinc oxide in the light-emitting device.
• The choice of electron transport layers is crucial for maximizing performance in perovskite light-emitting diodes.
• These advancements aim to overcome significant constraints for practical deployment in various technologies.