In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal dependencies of the boron concentration on the distance in the crystalline medium. Numerical simulations of the channeling and photon emission processes have been carried out for 855 MeV electron and 530 MeV positron beams incident on boron-doped diamond with a four-period bending profile in the samples grown at the European Synchrotron Radiation Facility (ESRF). The simulations were performed using the MBN Explorer software package. It is shown that the channeling efficiency and the intensity of the crystalline undulator radiation strongly depend on the orientation of the incident beam relative to the bent channel profile at the entrance to the boron-doped layer. For the same conditions at the crystal entrance, the intensity of radiation emitted by positrons is significantly higher than that for electrons.
Korol et al. (Mon,) studied this question.