Study of Chemical-Physical Cleaning Technologies for Better Particle Removal Trapped on the Crystal Defects of 4H-SiC

Silicon carbide (SiC) stands out as a superior power semiconductor material due to its exceptional physical properties. However, conventional RCA cleaning methods are ineffective for SiC wafers. This study evaluates the efficacy of chemical-mechanical cleaning techniques, specifically PVA brush scrubbing and megasonic cleaning with hydrogen dissolved deionized water (DIW), in removing particle contaminants from SiC wafers. Findings reveal that while both methods effectively clean the wafer surface, megasonic cleaning with hydrogen dissolved DIW excels in removing particles trapped in crystal defects due to enhanced bubble cavitation. Thus, it is recommended for optimal SiC wafer cleaning.