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The electrical 180^ switching of the antiferromagnetic N\'eel vector is a long-term goal for building high-performance spintronic devices, such as the antiferromagnetic random-access memory that requires a single writing channel. For practical application, unavoidable thermal effects during the 180^ N\'eel vector switching process should be taken into account, which still need a profound understanding. Here, we present an unconventional thermal-modulation spin-orbit torque (SOT) mechanism for the 180^ N\'eel vector switching in the spin-splitting antiferromagnet Mn₅Si₃, in which the electrical SOT switching is highly modulated by Joule heating. Guided by this mechanism, we observed two distinct switching dynamical behaviors during the switching process, depending on whether heating effects raise the temperature above the N\'eel temperature of Mn₅Si₃ within the duration of electrical pulses. This unconventional switching mechanism is far beyond the scope of traditional SOT switching. Moreover, the thermal-modulation SOT mechanism showcases notably higher switching efficiency compared to the ferromagnetic and ferrimagnetic counterparts. Our findings not only deepen the understanding of the mechanism for electrical 180^ switching of the N\'eel vector but also of spintronic devices based on spin-splitting antiferromagnets with low power consumption.
Dai et al. (Mon,) studied this question.
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