Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>10¹² Cycles)

The impacts of Si doping in Hf ₀. ₇ Zr ₀. ₃ O ₂ films are studied in this work. Compared with the standard Hf ₀. ₅ Zr ₀. ₅ O ₂ (HZO) films, the samples with Si-doped Hf ₀. ₇ Zr ₀. ₃ O ₂ film show higher relative permittivities and lower leakages. More importantly, a high breakdown electric field (E ₁₃ 4. 3 MV/cm) and a low coercive field (E ₂ 0. 64 MV/cm) have been achieved experimentally. In this way, E ₂ / E ₁₃ could be reduced from 32% to 15%, and this benefits the endurance property effectively. Specifically, compared with the HZO samples, better endurance and weaker fatigue (> 10 ^12 cycles at 2. 5 MV/cm) have been observed in Si-doped Hf ₀. ₇ Zr ₀. ₃ O ₂ devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf ₀. ₇ Zr ₀. ₃ O ₂ film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities.