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With simple compact pads, DC probes were used for measurements of crosstalk and substrate coupling in gallium-nitride (GaN) power integrated circuits (ICs). By proper electrical measurement calibration of the DC probing system, a crosstalk voltage down to 4.4 mV and substrate coupling up to -38 dB were measured up to 25 MHz for a GaN-on-Si power IC, using an oscilloscope and a spectrum analyzer respectively. Despite some accuracy limitations, it is a low-cost viable method for determining especially substrate coupling in power ICs.
Cui et al. (Mon,) studied this question.