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Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.
Kachhia et al. (Thu,) studied this question.