High-performance low dropout regulator (LDO) chips are core components that provide clean power for high-precision sensors, radio frequency (RF) circuits, low noise amplifiers and other noise-sensitive circuits. In the reported literature, the designed LDO chip has advantages in certain parameters, but it cannot meet all the requirements of a high power supply rejection ratio (PSRR), low output noise and low standby current at the same time, which makes the high-end applications of LDOs greatly limited. In this paper, an LDO chip with high PSRR, low output noise and low standby current has been designed and fabricated. By increasing the loop gain, introducing an improved feedforward path, and adopting isolated power supply, the PSRR of the LDO at different frequency bands is greatly improved. By optimizing the design of the error amplifier (EA) and adding a low-pass filter to filter out the reference noise, the output voltage noise of the LDO is reduced. Within the depletion process and an optimized reference structure, the standby power consumption of the LDO is reduced without damaging the output voltage accuracy. The chip is taped out with SMIC’s 0.18 μm/5 V/BCD process. The measured PSRR of the chip is as high as 95dB at a frequency of 1 kHz, and the high-frequency (1 MHz) PSRR is above 45 dB. The amplitude of integrated output noise is below 5.4 μVrms within the frequency range of 10 Hz to 100 KHz. When the load current is zero, the measured standby current is less than 400 nA. The test results indicate that the chip has excellent performance in terms of PSRR, output noise and standby power consumption.
Guo et al. (Sat,) studied this question.