The direct photolithographic patterning of quantum dots (QDs) presents a promising route for high-resolution displays, while the associated loss in electroluminescence efficiency remains a significant challenge. This work addresses this challenge by introducing a fluorinated bisazide-derived photo-crosslinker, which enables high-fidelity patterning while preserving optoelectronic properties. Central to our strategy, this molecularly engineered crosslinker undergoes efficient nitrene-mediated crosslinking upon i-line (365 nm) exposure, forming robust networks between the QDs’ native ligands without compromising their electrical functionality. This approach achieves high-fidelity red, green, and blue (RGB) patterns with individual pixel sizes of 24 μm × 24 μm and a narrow pixel spacing of 2.5 μm. Combined with a Zn1−xMgxO electron-transport layer to optimize interfacial charge balance, the resulting red quantum-dot light-emitting diodes (QLEDs) retain an external quantum efficiency of 10.88%, representing 85.67% retention compared to unpatterned devices. This strategy is universally applicable, as demonstrated by the successful operation of green (8.46% external quantum efficiency (EQE)) and blue (2.25% EQE) devices. Our work establishes a scalable, lithography-compatible platform that effectively bridges the gap between high-resolution patterning and high-performance electroluminescence, paving the way for next-generation full-color microdisplays.
Zhu et al. (Sun,) studied this question.