ABSTRACT The design of efficient electrode nanomaterials for energy devices necessitates precise control over their electronic properties. Achieving this requires accurate manipulation of the Fermi level ( E F ) through modulation of the electronic band structure, a strategy referred as E F ‐engineering. Herein, designing of hollow nanorods (Mo‐Sn‐Zn‐S Hollow Nanorods, designated as MSZS) of Zn and S dual vacancies (V Zn+S ) incorporated MoS 2 composite is introduced, where the larger cationic sizes of Zn and Sn than that of Mo induce V Zn+S and subsequently lattice expansion to achieve precise E F ‐engineering. These defects significantly enhance the material's electrical and ionic conductivity. Besides, the novel hollow structure of MSZS offers large sodium‐ion migration channels with a low sodium‐ion diffusion kinetic barrier, making the MSZS as a promising anode material for sodium‐ion batteries (SIBs). Therefore, the novel V Zn+S incorporated MSZS anode delivers a high capacity of 854 mAh g −1 at 0.5 C (99.14% retention after 100 cycles), and a superior high‐rate stability of 614 mAh g −1 at 4 C (82.3% retention after 500 cycles). The synergy of defects, hollow morphology, and E F engineering contributes to its performance, inspiring the design of precisely engineered electrodes for advanced energy storage.
Lin et al. (Thu,) studied this question.