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Sub-5-nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs | Synapse

February 19, 2026Nanoscale0 citations

Sub-5-nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

XDXiao-Lu DuanNanjing University of Posts and Telecommunications YGYandong GuoNanjing University of Posts and Telecommunications YCYe-Wei ChenNanjing University of Posts and Telecommunications

Key Points

The research aims to explore the quantum-transport characteristics of sub-5-nm gate-all-around MOSFETs.
Conducted a first-principles quantum-transport analysis of GAA MOSFETs
Examined the electrostatic control efficiency
Investigated the use of post-transition-metal monochalcogenides
Demonstrated improved electrostatic control compared to traditional MOSFET designs
Identified effective scaling potential for future devices
Highlighted the advantages of using post-transition-metal materials

Abstract

Gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) have emerged as promising candidates for continued device scaling owing to their superior electrostatic control. Here we perform a systematic first-principles quantum-transport investigation of...

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Cite This Study

Duan et al. (Thu,) studied this question.

synapsesocial.com/papers/6996a898ecb39a600b3ef7c0 https://doi.org/https://doi.org/10.1039/d5nr04763c