The chiral edge states in the quantum anomalous Hall effect enable dissipationless longitudinal transport without requiring an external magnetic field, making them promising for the realization of low-power, high-speed electronic devices. However, realizing high-Chern-number quantum anomalous Hall effect with tunable edge channels and large band gaps remains challenging. Here, we propose a stable two-dimensional monolayer kagome ferromagnet, Yb2 (C6H4) 3, as a quantum anomalous Hall insulator with a band gap of 102. 4 meV and a non-trivial Chern number C=-1. Through AB-stacking of monolayer Yb2 (C6H4) 3, the material can exhibit tunable high Chern numbers (for example, C=-2 for the bilayer) due to ferromagnetic interlayer interactions, thereby providing additional conducting channels. Additionally, these Chern numbers can be effectively modulated by an external electric field, enabling devices with electric-field-controllable conductance. This dual tunability-through both layer stacking and electric gating-establishes Yb2 (C6H4) 3 as a potential platform for high-temperature, multi-channel topological electronics.
Guo et al. (Fri,) studied this question.