Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs

Key Points

• This research aims to assess how temperature and base bias stress affect the static characteristics of Silicon and 4H-SiC NPN vertical power BJTs.
• Conducted experimental tests on 800-V, 20-A Silicon and 1.7-KV, 15-A 4H-SiC BJTs.
• Analyzed I-V characteristics, base leakage current, and on-state resistance across temperatures from 25°C to 175°C.
• Tested various base currents and base stress levels of 1 V, 3 V, and 6 V with and without external resistance.
• Identified significant sensitivity of I-V characteristics to temperature increases and bias stress.
• Observed variations in base leakage current relative to changes in temperature and stress conditions.
• Determined that on-state resistance is impacted by both temperature and base current configurations.