ABSTRACT Driven by global sustainable development goals and the rapid advancement of artificial intelligence (AI), low energy consumption, high integration density, and sustainability have emerged as core imperatives for optoelectronic device development. Conventional complementary metal‐oxide‐semiconductor (CMOS) architectures, featuring discrete sensing‐memory‐computing functions, are constrained by the von Neumann bottleneck, which is marked by excessive energy consumption in data transmission, and fail to meet the energy‐saving demands of scenarios like the internet of things (IoT) and neuromorphic computing. In contrast, two‐dimensional (2D) materials, with attributes including atomic‐scale thickness, efficient optoelectronic coupling, and low fabrication energy consumption, serve as pivotal carriers to overcome this bottleneck. Prototype 2D material‐based optoelectronic devices are evolving from single‐function units to sensing‐memory‐computing integrated systems, reducing energy redundancy in traditional architectures via material‐structure synergetic adaptation while combining low energy consumption, high integration, and environmental compatibility. With breakthroughs in key technologies, All‐in‐One 2D material devices will most likely reshape the optoelectronic industry landscape, providing hardware support for the synergy between AI and green development.
Wang et al. (Tue,) studied this question.