The ability to deposit high-quality SnO2 thin films using simple, scalable techniques such as aerosol-assisted chemical vapor deposition (AACVD) has increased its potential for optoelectronic applications, including photovoltaics, displays, and smart windows. However, optimizing the structural and electronic properties of SnO2 requires a deeper understanding of how deposition parameters influence film growth. To the best of our knowledge, the optimization of SnO2 films using SnCl4 as a precursor via AACVD has been largely overlooked in the literature. This study addresses that gap by selectively investigating the effects of solvent composition, deposition temperature, and misting time on the microstructure, optical transparency, and electrical performance of the SnO2 films. Residual chlorine in the films was detected and quantified. The results demonstrate that careful control of solution chemistry and deposition conditions enabled the fabrication of SnO2 films with high transparency and low resistivity, comparable to those of doped systems. Importantly, these insights can also pave the way for further optimization of commercially available fluorine-doped tin oxide (FTO) films, which are widely deposited via CVD, extending the industrial relevance of this work.
Ramzan et al. (Thu,) studied this question.