The growing demands of artificial intelligence and big data require semiconductor technologies that enable high-performance computing with low power consumption. Ferroelectric materials combined with semiconductors are one intriguing alternative for the future needs. For example, thin ferroelectric doped hafnium dioxide, deposited by atomic layer deposition (ALD), is already well integrated and scaled up in current semiconductor device processing. This study investigates ALD growth of HfO2 thin films using CpHf(NMe2)3 and O3 as precursors focusing on interface evolution through low energy ion scattering and x-ray photoelectron spectroscopy (XPS). A flow-type ALD reactor that is in vacuo connected to the surface-sensitive techniques was used allowing for in-depth analysis without air exposure. The study highlights that the full coverage of oxidized TiN substrate is achieved after approximately 30 ALD cycles. The XPS spectra demonstrate interaction between the substrate and the hafnium oxide film suggesting valence and conduction band bending in the films. The findings contribute to the understanding of the deposition, growth, and interface changes for developing thin ferroelectric HfO2.
Chundak et al. (Thu,) studied this question.
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