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Although the thermoelectric effect was discovered around 200 years ago, the main application in practice is thermoelectric cooling using the traditional Bi2Te3. The related studies of new and efficient room-temperature thermoelectric materials and modules have, however, not come to fruition yet. In this work, the electronic properties of n-type Mg3.2Bi1.5Sb0.5 material are maximized via delicate microstructural design with the aim of eliminating the thermal grain boundary resistance, eventually leading to a high zT above 1 over a broad temperature range from 323 K to 423 K. Importantly, we further demonstrated a great breakthrough in the non-Bi2Te3 thermoelectric module, coupled with the high-performance p-type α-MgAgSb, for room-temperature power generation and thermoelectric cooling. A high conversion efficiency of ~2.8% at the temperature difference of 95 K and a maximum temperature difference of 56.5 K are experimentally achieved. If the interfacial contact resistance is further reduced, our non-Bi2Te3 module may rival the long-standing champion commercial Bi2Te3 system. Overall, this work represents a substantial step towards the real thermoelectric application using non-Bi2Te3 materials and devices.
Liu et al. (Wed,) studied this question.