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In this paper, we analyzed and modeled the program disturbance caused by hot carrier injection(HCI) in 3D NAND flash memory. HCI in 3D NAND occurs by band-to-band tunneling(BTBT) due to large electric field near the programming cell in the inhibited string. The dependency of HCI on electric field was confirmed at various bias conditions. Also, HCI modeling was done by calculating the exact electric field considering the change of channel potential over time due to BTBT.
Lee et al. (Tue,) studied this question.