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Abstract Using the tight‐binding method, the valence band structures and densities of states for C, Si, Ge, GaAs, and ZnSe are calculated. Very good agreement is obtained with other calculations when all nearest‐ and one second‐nearest‐neighbor interactions are included. The effects of the various interactions on the density of states are discussed.
Chadi et al. (Sat,) studied this question.
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