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We study numerically the energy distribution of electrons and the hopping conductivity as a function of the temperature T and electric field E in the tail of the density of states of an amorphous semiconductor where states are localized with a localization length a. We find a Boltzmann distribution with an effective temperature T₄₅₅ (T, E) which in the limit of eEak₁T is close to 0. 67eEa/k₁. The conductivity (T, E) collapses to a single universal curve when plotted as a function of the effective temperature T₄₅₅ (T, E). This confirms the fact that T₄₅₅ determines the conductivity. The same effective temperature also determines the dependencies of the steady state and transient photoconductivities on T and E.
Marianer et al. (Sun,) studied this question.