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With their excellent optoelectronic properties, halide perovskite (HP) semiconductors have witnessed successful applications in many fields, such as solar cells, LEDs, photodetectors, transistors, and memristors. Exploiting their fascinating physical nature for the development of single nanodevices with multifunctionalities is significant yet remains challenging. We report a multifunctional device based on the n-perovskite/p-spiro-MeOTAD p-n heterojunction diode that enables the integration of photovoltaic, photodetection, and photosynaptic functions in a single device. The device exhibits a high photoelectronic conversion efficiency (PCE) of 17.64% under AM 1.5G illumination and excellent photodetection characteristics including a low drive voltage of 0.01 V, a short response time of 0.17 s, high switching repeatability, and stability. Coupled with the superior photomemristive effect of the device that can be used for the emulation of short- and long-term memory formation of visual synapses, these results suggest that the HP-based p-n heterojunction devices hold great potential in multifunctional integrated device applications.
Huang et al. (Wed,) studied this question.
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